Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions

Planar and nanowire (NW) tunneling field effect transistors (TFETs) have been fabricated on ultra thin strained and unstrained SOI with shallow doped Nickel disilicide (NiSi2) source and drain (S/D) contacts. We developed a novel, self-aligned process to form the p-i-n TFETs which greatly easies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dopant segregation. Two methods of dopant segregation are compared: Dopant segregation based on the “snowplough” effect of dopants during silicidation and implantation into the silicide (IIS) followed by thermal outdiffusion. High drive currents of up to 60 μA/μm of planar p-TFETs were achieved indicating good silicide/silicon tunneling junctions. The non linear temperature dependence of the inverse subthreshold slope S indicates typical TFET behavior. Strained Si NW array n-TFETs with omega shaped HfO2/TiN gates showed high drive currents of 7 μA/μm @ 1V Vdd and steep inverse subthreshold slopes with minimum values of 50mV/dec due to the smaller band gap of strained Si and optimized electrostatics.